DocumentCode :
2855340
Title :
An experimental high-density memory array fabricated with electron beam
Author :
Yu, Haoyong ; Dennard, R. ; Chang, Ting-Hao ; Hatzakis, M.
Author_Institution :
IBM T. J. Watson Research Center, Yorktown Heights, NY, USA
Volume :
XVI
fYear :
1973
fDate :
14-16 Feb. 1973
Firstpage :
98
Lastpage :
99
Keywords :
Aluminum; Capacitance; Electron beams; Geometrical optics; Integrated circuit technology; Large scale integration; Lithography; Resists; Silicon; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1973.1155176
Filename :
1155176
Link To Document :
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