Title :
High-power GaAs FET amplifier - A multigate structure
Author :
Napoli, L. ; DeBrecht, R. ; Hughes, John ; Reichert, W. ; Dreeben, A. ; Triano, Alex
Author_Institution :
RCA Laboratories, Princeton, NJ, USA
Keywords :
Bonding; Circuits; Degradation; Electric breakdown; Fabrication; Gallium arsenide; High power amplifiers; Insulation; Microwave FETs; Ohmic contacts;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1973.1155177
