DocumentCode :
2855383
Title :
Oxide isolated ion-implanted bipolar transistors for high packing density and low power-delay product
Author :
Evans, W. ; Tretola, A. ; Payne, Roger ; Olmstead, M. ; Speeney, D.
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, NJ, USA
Volume :
XVI
fYear :
1973
fDate :
14-16 Feb. 1973
Firstpage :
174
Lastpage :
175
Keywords :
Bipolar transistors; Logic circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1973.1155179
Filename :
1155179
Link To Document :
بازگشت