Models of nanoelectronic devices on single-electron, resonant tunneling effects and quantum wires for nano and microsystem equipment

The models of nanoelectronic devices on single-electron tunneling, resonant tunneling effects and quantum wires are described. These models have been included into a new version of nanoelectronic device simulator NANODEV for PC. New models allow to simulate other devices including more complex structures. Principles of simulator design have been left without change. At present, we use several formalisms such formalism of wave functions, formalism of scattering matrix and formalism of Wigner function. For each class of nanoelectronic devices, different hierarchy models can be used. The principles allow to realize modification of the system in order to increase its possibilities