• DocumentCode
    2855474
  • Title

    Experimental determination of resonant-tunneling diode operating speed with taking into account the electrons lifetime in the quantum well

  • Author

    Alkeev, N.V. ; Dorofeev, A.A.

  • Author_Institution
    Inst. of Radioeng. & Electron., Russian Acad. of Sci., Moscow
  • Volume
    2
  • fYear
    2005
  • fDate
    16-16 Sept. 2005
  • Firstpage
    623
  • Abstract
    Described in this paper is the method for determination of electrons concentration and their lifetime in a quantum well of the resonant-tunneling diode, based on the analysis of its impedance frequency dependence. It is shown, that electrons lifetime in the quantum well of the diode can limit its operating speed essentially
  • Keywords
    quantum well devices; resonant tunnelling diodes; electron lifetime; impedance frequency dependence analysis; quantum well; resonant-tunneling diode; Diodes; Electrons; IEEE catalog; Indium gallium arsenide; Magnetic tunneling; Microwave technology; Organizing; Programmable control; Resonance; Resonant tunneling devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2005 15th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    966-7968-80-4
  • Type

    conf

  • DOI
    10.1109/CRMICO.2005.1565064
  • Filename
    1565064