Title :
Experimental determination of resonant-tunneling diode operating speed with taking into account the electrons lifetime in the quantum well
Author :
Alkeev, N.V. ; Dorofeev, A.A.
Author_Institution :
Inst. of Radioeng. & Electron., Russian Acad. of Sci., Moscow
Abstract :
Described in this paper is the method for determination of electrons concentration and their lifetime in a quantum well of the resonant-tunneling diode, based on the analysis of its impedance frequency dependence. It is shown, that electrons lifetime in the quantum well of the diode can limit its operating speed essentially
Keywords :
quantum well devices; resonant tunnelling diodes; electron lifetime; impedance frequency dependence analysis; quantum well; resonant-tunneling diode; Diodes; Electrons; IEEE catalog; Indium gallium arsenide; Magnetic tunneling; Microwave technology; Organizing; Programmable control; Resonance; Resonant tunneling devices;
Conference_Titel :
Microwave & Telecommunication Technology, 2005 15th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-80-4
DOI :
10.1109/CRMICO.2005.1565064
