Title :
Influence of the voltage bias on the magnetoresistance of magnetic tunneling junction
Author :
Beletskii, N.N. ; Borysenko, S.A.
Author_Institution :
Usikov Inst. for Radiophys. & Electron., Nat. Acad. of Sci. of Ukraine, Kharkov
Abstract :
The influence of bias voltage on the value and the sign of tunneling magnetoresistance (TMR) in the ferromagnetic/insulator/ferromagnetic junction is studied
Keywords :
ferromagnetic materials; tunnelling magnetoresistance; TMR; bias voltage; ferromagnetic-insulator-ferromagnetic junction; magnetic tunneling junction; tunneling magnetoresistance; Dielectrics and electrical insulation; Electrodes; Electrons; Helium; Indium tin oxide; Magnetic tunneling; Nickel; Polarization; Tunneling magnetoresistance; Voltage;
Conference_Titel :
Microwave & Telecommunication Technology, 2005 15th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-80-4
DOI :
10.1109/CRMICO.2005.1565066
