• DocumentCode
    2855549
  • Title

    Characteristics of microwave detectors with low barrier planar Schottky diodes

  • Author

    Shashkin, V.I. ; Vaks, V.L. ; Danil´tsev, V.M. ; Maslovsky, A.V. ; Murel, A.V. ; Nikiforov, S.D. ; Chechenin, Yu.I.

  • Author_Institution
    Inst. for Phys. of Microstruct., RAS, Nizhny Novgorod
  • Volume
    2
  • fYear
    2005
  • fDate
    16-16 Sept. 2005
  • Firstpage
    631
  • Abstract
    The design principles and technology of fabricating sensitive microwave detectors on the basis of low barrier (0.2-0.3 eV) Schottky diodes are developed. A family of diodes and diode-based broadband detectors featuring 1000-5000 V/W sensitivity and 10-11 W Hz -1/2 threshold power at millimeter wavelengths and zero-bias operation are fabricated
  • Keywords
    Schottky diodes; microwave detectors; millimetre wave detectors; Schottky diode; diode-based broadband detector; microwave detector; millimeter wavelength; zero-bias operation; Detectors; Frequency; IEEE catalog; Indium tin oxide; Microwave technology; Organizing; Schottky diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2005 15th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    966-7968-80-4
  • Type

    conf

  • DOI
    10.1109/CRMICO.2005.1565068
  • Filename
    1565068
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2855549