Title :
New technological possibilities for formation of GaAs and InP epitaxial layers for Gunn diodes
Author :
Arsentiev, I.N. ; Belyaev, A.E. ; Bobyl, A.V. ; Boltovets, N.S. ; Ivanov, V.N. ; Konakova, R.V. ; Konnikov, S.G. ; Kudryk, Ya.Ya. ; Milenin, V.V. ; Taraso, I. S V ; Markovsky, E.P. ; Rusu, E.V.
Author_Institution :
Ioffe Physico-Tech. Inst., RAN, Sankt-Peterburg
Abstract :
We consider a novel technological approach to formation of structurally-perfect indium-phosphide and gallium-arsenide epitaxial n-layers grown on specially prepared porous n+-InP and n+-GaAs substrates. The structural properties of epitaxial layers and output parameters of the Gunn diodes made on their basis were studied. The InP and GaAs epitaxial layers were grown in the same conditions on the standard substrates. The advantages of the epitaxial layers grown on porous substrates and Gunn diodes made on their basis are demonstrated
Keywords :
Gunn diodes; III-V semiconductors; epitaxial growth; gallium arsenide; indium compounds; GaAs; GaAs epitaxial layer; Gunn diode; InP; InP epitaxial layer; substrate; Buffer layers; Epitaxial layers; Gallium arsenide; Gold; Gunn devices; Indium phosphide; Ohmic contacts; Physics; Semiconductor diodes; Substrates;
Conference_Titel :
Microwave & Telecommunication Technology, 2005 15th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-80-4
DOI :
10.1109/CRMICO.2005.1565069
