Title :
A connection between technology and models using a computer analysis
Author :
Borel, J. ; Merckel, C. ; Monnier, J. ; Saintot, P. ; Vandorpe, J. ; Stern, M. ; Maffei, M.
Author_Institution :
L.E.T.I., Grenoble Cedex, France
Abstract :
The shape of doping profiles must be known to establish a relationship between electrical and technological parameters. It thus becomes possible to compute electrical properties and then derive physical models. This paper will present new computer programs affording the solution of two general sets of equations which account for impurities diffusion and free carriers transport.
Keywords :
Boundary conditions; Doping profiles; MOSFET circuits; Nonlinear equations; Nuclear physics; Numerical analysis; Physics computing; Semiconductor process modeling; Shape; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1973.1155191
