DocumentCode
2855573
Title
A connection between technology and models using a computer analysis
Author
Borel, J. ; Merckel, C. ; Monnier, J. ; Saintot, P. ; Vandorpe, J. ; Stern, M. ; Maffei, M.
Author_Institution
L.E.T.I., Grenoble Cedex, France
Volume
XVI
fYear
1973
fDate
14-16 Feb. 1973
Firstpage
102
Lastpage
103
Abstract
The shape of doping profiles must be known to establish a relationship between electrical and technological parameters. It thus becomes possible to compute electrical properties and then derive physical models. This paper will present new computer programs affording the solution of two general sets of equations which account for impurities diffusion and free carriers transport.
Keywords
Boundary conditions; Doping profiles; MOSFET circuits; Nonlinear equations; Nuclear physics; Numerical analysis; Physics computing; Semiconductor process modeling; Shape; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1973.1155191
Filename
1155191
Link To Document