DocumentCode :
2855606
Title :
A graphical study of the current distribution in short-channel IGFETS
Author :
Hachtel, G. ; Mack, M.
Author_Institution :
IBM T. J. Watson Research Center, Yorktown Heights, NY, USA
Volume :
XVI
fYear :
1973
fDate :
14-16 Feb. 1973
Firstpage :
110
Lastpage :
111
Abstract :
A report on the effects of channel length, L, drain diffusion junction depth, ZDJ, and the scatter-limited saturation velocity, VSATN = 107cm/s on the current distribution in short N-channel enhancement mode IGFETs, studied numerically, will be offered.
Keywords :
Boron; Current distribution; Displays; Doping; Electric variables measurement; Electron mobility; Partial differential equations; Particle scattering; Poisson equations; Space charge;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1973.1155193
Filename :
1155193
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2855606
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