Title :
Influence of structural defects on electric current in the channel of MOS-transistor
Author :
Smyntyna, V. ; Kulinich, O. ; Glauberman, M. ; Chemeresuk, G. ; Yatsunsky, I.
Author_Institution :
Mechnikov Odessa Nat. Univ.
Abstract :
The influence of structural imperfections on the basic parameters of the I-V characteristic of MOS-transistors has been found out with aid of modern research methods. 1) silicon´s subsurface layers consist of strong breaking silicon, which has some dielectric properties, and silicon crystal layers with dislocation´s nets and finished within the limits of layers of silicon. 2) oxygen reveals electrical activity and influences the parameters of structural defects that, in turn, affect the charge carrier mobility
Keywords :
MOSFET; dielectric properties; electric current; elemental semiconductors; silicon; I-V characteristic; MOS-transistor; Si; dielectric property; electric current; silicon crystal layer; Current; Helium; Human computer interaction; IEEE catalog; Microwave technology; Organizing; MOS-transistor; silicon; structural defects;
Conference_Titel :
Microwave & Telecommunication Technology, 2005 15th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-80-4
DOI :
10.1109/CRMICO.2005.1565072
