DocumentCode
2855614
Title
Influence of structural defects on electric current in the channel of MOS-transistor
Author
Smyntyna, V. ; Kulinich, O. ; Glauberman, M. ; Chemeresuk, G. ; Yatsunsky, I.
Author_Institution
Mechnikov Odessa Nat. Univ.
Volume
2
fYear
2005
fDate
16-16 Sept. 2005
Firstpage
640
Abstract
The influence of structural imperfections on the basic parameters of the I-V characteristic of MOS-transistors has been found out with aid of modern research methods. 1) silicon´s subsurface layers consist of strong breaking silicon, which has some dielectric properties, and silicon crystal layers with dislocation´s nets and finished within the limits of layers of silicon. 2) oxygen reveals electrical activity and influences the parameters of structural defects that, in turn, affect the charge carrier mobility
Keywords
MOSFET; dielectric properties; electric current; elemental semiconductors; silicon; I-V characteristic; MOS-transistor; Si; dielectric property; electric current; silicon crystal layer; Current; Helium; Human computer interaction; IEEE catalog; Microwave technology; Organizing; MOS-transistor; silicon; structural defects;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2005 15th International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
966-7968-80-4
Type
conf
DOI
10.1109/CRMICO.2005.1565072
Filename
1565072
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