Title :
Silicon MIS-varactors with dielectric films of holmium and scandium oxides
Author :
Guryanov, A.M. ; Pashin, A.V.
Author_Institution :
Samara State Archit. Building Univ.
Abstract :
Electrical and physical properties of MIS-structures Al-Ho2 O3-Si and Al-Sc2O3-Si have been investigated. Values of surface states density at the junction: semiconductor dielectric, values of surface generation velocity and lifetime of minority charge carriers have been determined. Noise characteristics have been defined
Keywords :
MIS devices; dielectric thin films; holmium compounds; minority carriers; scandium compounds; surface states; varactors; Al-Ho2O3-Si; Al-Sc2O3-Si; MIS-varactor; dielectric film; electrical-physical property; minority charge carrier; semiconductor dielectric; silicon; surface generation velocity; Coordinate measuring machines; Dielectric films; Helium; IEEE catalog; Microwave technology; Organizing; Silicon;
Conference_Titel :
Microwave & Telecommunication Technology, 2005 15th International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
966-7968-80-4
DOI :
10.1109/CRMICO.2005.1565077
