• DocumentCode
    2855685
  • Title

    Silicon MIS-varactors with dielectric films of holmium and scandium oxides

  • Author

    Guryanov, A.M. ; Pashin, A.V.

  • Author_Institution
    Samara State Archit. Building Univ.
  • Volume
    2
  • fYear
    2005
  • fDate
    16-16 Sept. 2005
  • Firstpage
    651
  • Abstract
    Electrical and physical properties of MIS-structures Al-Ho2 O3-Si and Al-Sc2O3-Si have been investigated. Values of surface states density at the junction: semiconductor dielectric, values of surface generation velocity and lifetime of minority charge carriers have been determined. Noise characteristics have been defined
  • Keywords
    MIS devices; dielectric thin films; holmium compounds; minority carriers; scandium compounds; surface states; varactors; Al-Ho2O3-Si; Al-Sc2O3-Si; MIS-varactor; dielectric film; electrical-physical property; minority charge carrier; semiconductor dielectric; silicon; surface generation velocity; Coordinate measuring machines; Dielectric films; Helium; IEEE catalog; Microwave technology; Organizing; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2005 15th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    966-7968-80-4
  • Type

    conf

  • DOI
    10.1109/CRMICO.2005.1565077
  • Filename
    1565077
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2855685