DocumentCode
2855707
Title
High-speed solar blind MSM-photodetectors
Author
Averine, S.V. ; Kuznetzov, P.I. ; Zhitov, V.A. ; Zacharov, L.Yu. ; Yakuscheva, G.G. ; Dmitriev, M.D.
Author_Institution
Inst. of Radio Eng. & Electron., Russian Acad. of Sci., Moscow
Volume
2
fYear
2005
fDate
16-16 Sept. 2005
Firstpage
655
Abstract
The metal-semiconductor-metal (MSM) diodes are very attractive for short wavelength detection due to their simple structure, high-speed response and low dark current. In this work we present the results of fabrication of AlGaN MSM photodetectors on sapphire substrates. Two types of heterostructures are fabricated and analyzed. The detector´s characteristics are studied for different Schottky barrier metals
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; metal-semiconductor-metal structures; photodetectors; AlGaN; MSM; Schottky barrier metal; dark current; detectors characteristics; heterostructure fabrication; high-speed response; metal-semiconductor-metal diode; sapphire substrate; solar blind MSM-photodetector; wavelength detection; Aluminum gallium nitride; Dark current; Detectors; Gallium nitride; IEEE catalog; Microwave technology; Organizing; Photodiodes; Physics; Schottky barriers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2005 15th International Crimean Conference
Conference_Location
Sevastopol, Crimea
Print_ISBN
966-7968-80-4
Type
conf
DOI
10.1109/CRMICO.2005.1565079
Filename
1565079
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