• DocumentCode
    2855731
  • Title

    Selective wet etching process for AlGaAs/InGaAs pHEMT fabrication

  • Author

    Gusenkova, A.V. ; Maleev, N.A. ; Zhukov, A.E. ; Vasil´ev, A.P. ; Shulenkov, A.S.

  • Author_Institution
    Minsk R&D Inst. of Radiomater.
  • Volume
    2
  • fYear
    2005
  • fDate
    16-16 Sept. 2005
  • Firstpage
    659
  • Abstract
    The designed selective wet etching process for AlGaAs/InGaAs pHEMT is discussed. Proposed technology provides precise control of channel etching and demonstrates high uniformity of device characteristics
  • Keywords
    III-V semiconductors; aluminium compounds; etching; gallium arsenide; indium compounds; power HEMT; AlGaAs-InGaAs; high electron mobility transistor; pHEMT fabrication; precise control; selective wet etching process; Electrons; Etching; Fabrication; Gallium arsenide; IEEE catalog; Indium gallium arsenide; Microwave technology; Organizing; PHEMTs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2005 15th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    966-7968-80-4
  • Type

    conf

  • DOI
    10.1109/CRMICO.2005.1565081
  • Filename
    1565081
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2855731