Stimulation of a microwave plasmachemical photoresist removal process by a self-sustained low-frequency discharge

The results of studying the effect of the external energy influence of a low-frequency field (f=10 KHz) on the degree of the chemical activity of the microwave discharge plasma (f=2.45 GHz) excited in a volumetric type plasmatrone reactor with an applicator on the basis of a rectangular resonator are submitted. The process of the removal of photoresistive protection coatings from the surface of 100-mm diameter semiconductor plates was studied. A combined discharge was excited in several ways: by a continuous low-frequency discharge and by an impulsing (50 Hz recurrence frequency) microwave discharge; by impulsing low-frequency and microwave frequency discharges synchronized in duration and follow-up period. The study established that the combined discharge possesses the prevalent degree of chemical activity with respect to each type of the discharges taken separately