Title :
A one-transistor memory cell with nondestructive readout
Author :
Oldham, W. ; Cserveny, S. ; Sigmund, H.
Author_Institution :
University of California, Berkeley, CA, USA
Abstract :
This paper will describe a dynamic high-speed three-line access memory cell which occupies the area of a single bipolar transistor. New design is compatible with bipolar processing, with the addition of one extra masking step.
Keywords :
Bipolar transistors; Circuit testing; Contracts; Delay; Nonvolatile memory; Ohmic contacts; Pulse measurements; Schottky barriers; Schottky diodes; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1973.1155212
