Title :
Accurate MOS threshold voltage detector for bias circuitry
Author :
Alini, R. ; Baschirotto, A. ; Castello, R. ; Montecchi, F.
Author_Institution :
Dipartimento di Elettronica, Pavia Univ., Italy
Abstract :
A circuit for the detection of the threshold voltage V TH of MOS devices is presented. The basic scheme proposed here is implemented in BiCMOS technology but can also be applied in any standard CMOS process. The deviation of the detected VTH from the actual (or extrapolated) one is analytically estimated, taking into account the effects due to channel length modulation and mobility modulation. The results obtained show that the error at ambient temperature is lower than 0.6% for all values of VDD larger than 3.25 V, and for temperatures in the range -25°C to 125°C the error is never higher than 4%
Keywords :
BiCMOS integrated circuits; MOS integrated circuits; electric sensing devices; insulated gate field effect transistors; integrated circuit testing; voltage measurement; -25 to 125 degC; BiCMOS technology; CMOS process; MOS threshold voltage detector; bias circuitry; channel length modulation; mobility modulation; BiCMOS integrated circuits; CMOS integrated circuits; CMOS process; CMOS technology; Detectors; MOS devices; MOSFETs; Temperature dependence; Threshold voltage; Virtual manufacturing;
Conference_Titel :
Circuits and Systems, 1992. ISCAS '92. Proceedings., 1992 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0593-0
DOI :
10.1109/ISCAS.1992.230271
