• DocumentCode
    2856097
  • Title

    A 1-mil2single-transistor memory cell in N-silicon-gate technology

  • Author

    Stein, K. ; Friedrich, H.

  • Author_Institution
    Siemens AG, Munich, Germany
  • Volume
    XVI
  • fYear
    1973
  • fDate
    14-16 Feb. 1973
  • Firstpage
    30
  • Lastpage
    31
  • Abstract
    A cell design using a 4-μm width diffused bit line and a 5μm width aluminum word line contacted to a silicon gate over the channel region of the selection transistor of the memory cell will be described. Design of a sense-refresh circuit which can be used for 256 of the cells per amp will also be covered.
  • Keywords
    Distributed amplifiers; Educational programs; Educational technology; Paper technology; Random access memory; Read-write memory; Signal processing; Switching circuits; Threshold voltage; Video recording;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1973.1155226
  • Filename
    1155226
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2856097