• DocumentCode
    2856131
  • Title

    Bipolar versus FET for microwaves

  • Volume
    XVI
  • fYear
    1973
  • fDate
    14-16 Feb. 1973
  • Firstpage
    72
  • Lastpage
    72
  • Abstract
    Significant advances in the GaAs field-effect transistor technology have resulted in an active microwave two-port device for circuit application through the Kuband. These new devices offer low-noise performance and very recently have demonstrated substantial power generation properties. It is therefore anticipated that strong competition will result.
  • Keywords
    Appraisal; Availability; Bipolar transistors; Gallium arsenide; Microwave FETs; Microwave circuits; Microwave devices; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1973.1155229
  • Filename
    1155229
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2856131