DocumentCode :
2856272
Title :
Meeting nanometer DPM requirements through DFT
Author :
Jahangiri, Jay ; Abercrombie, David
Author_Institution :
Mentor Graphics Corp., Beaverton, OR, USA
fYear :
2005
fDate :
21-23 March 2005
Firstpage :
276
Lastpage :
282
Abstract :
As nanometer technology has increased the functionality of integrated circuits, so has it also presented challenges to acceptable yield levels. With defects per million (DPM) rates increasing, designers and manufacturers are looking for ways to enhance yield outcome. Improvements can be made by screening for defects more efficiently or by eliminating the issues leading to defects, which is the basis for any design for manufacturing (DFM) methodology. Standard test practices have become less effective for nanometer designs. However, advanced test methods show improvements can be made in three areas: increased defect coverage, increased yield learning and decreased cost.
Keywords :
design for manufacture; design for testability; integrated circuit design; integrated circuit reliability; integrated circuit testing; integrated circuit yield; nanoelectronics; DFM methodology; DFT; cost; defect coverage; defect rates; defects per million; design for manufacturing methodology; integrated circuit functionality; nanometer technology; reliability; yield levels; Costs; Degradation; Design for manufacture; Electronic equipment testing; Graphics; Integrated circuit technology; Integrated circuit testing; Integrated circuit yield; Manufacturing; Mechanical systems;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality of Electronic Design, 2005. ISQED 2005. Sixth International Symposium on
Print_ISBN :
0-7695-2301-3
Type :
conf
DOI :
10.1109/ISQED.2005.76
Filename :
1410596
Link To Document :
بازگشت