Title :
Charge-coupled image-sensing devices using three levels of polysilicon
Author :
Sequin, C. ; Sealer, D. ; Bertram, W. ; Buckley, Robert ; Morris, F. ; Shankoff, T. ; Tompsett, M.
Author_Institution :
Bell Laboratories, Murray Hill, NJ, USA
Abstract :
Charge-coupled linear and area-image sensors have been built using a three-phase polysilicon approach with overlapping electrodes in three levels of polysilicon. The structure has been found to relax the demands on photolithography and shows extremely good transfer efficiency.
Keywords :
Bars; Charge coupled devices; Electrodes; Etching; Fabrication; Frequency; Gettering; Image sensors; Insulation; Silicon;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1974 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1974.1155259
