• DocumentCode
    2856556
  • Title

    Charge-coupled image-sensing devices using three levels of polysilicon

  • Author

    Sequin, C. ; Sealer, D. ; Bertram, W. ; Buckley, Robert ; Morris, F. ; Shankoff, T. ; Tompsett, M.

  • Author_Institution
    Bell Laboratories, Murray Hill, NJ, USA
  • Volume
    XVII
  • fYear
    1974
  • fDate
    15-13 Feb. 1974
  • Firstpage
    24
  • Lastpage
    25
  • Abstract
    Charge-coupled linear and area-image sensors have been built using a three-phase polysilicon approach with overlapping electrodes in three levels of polysilicon. The structure has been found to relax the demands on photolithography and shows extremely good transfer efficiency.
  • Keywords
    Bars; Charge coupled devices; Electrodes; Etching; Fabrication; Frequency; Gettering; Image sensors; Insulation; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1974 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1974.1155259
  • Filename
    1155259
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2856556