Title :
Cascode MOS image sensors
Author_Institution :
Stanford University, Stanford, CA, USA
Abstract :
An MOS photodiode readout structure, providing the basis for a self-scan image sensor with a spike noise level significantly less than conventional MOS transistor scan sensors, will be discussed.
Keywords :
Aluminum; Capacitance; Electrodes; Image sensors; MOSFETs; Noise level; Optical arrays; Optical noise; Photodiodes; Silicon;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1974 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1974.1155262
