Title :
Short-channel V-groove MOS (VMOS) logic
Author :
Rodgers, T. ; Meindl, J.
Author_Institution :
Stanford University, Stanford, CA, USA
Abstract :
A high-speed, high-density, TTL-compatible N-channel MOS logic structure will be described. The technique has made it possible to develop a logic gate operating on a 5-V supply with propagation delays of less than 5 ns at a 1.2 pJ power speed product; also TTL compatible MOS circuits which are as fast as TTL, but a factor of 5-8 times denser than TTL.
Keywords :
Capacitance; Delta modulation; Geometry; Inverters; Logic; Oxidation; Resistors; Silicon; Substrates; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1974 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1974.1155273
