• DocumentCode
    2856839
  • Title

    High-speed integrated logic with GaAs MESFETs

  • Author

    Van Tuyl, R. ; Liechti, C.

  • Author_Institution
    Hewlett-Packard Laboratories, Palo Alto, CA, USA
  • Volume
    XVII
  • fYear
    1974
  • fDate
    15-13 Feb. 1974
  • Firstpage
    114
  • Lastpage
    115
  • Abstract
    A high-speed logic gate has been fabricated in GaAs. The circuit elements are Schottky diodes and MESFETs. The unloaded propagation delay is 60 ps with typical average power dissipation of 85 mW.
  • Keywords
    Circuit testing; Delay effects; Gallium arsenide; High speed integrated circuits; Logic circuits; Logic gates; Logic testing; MESFETs; Substrates; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1974 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1974.1155276
  • Filename
    1155276
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2856839