Volatge-sensor monolithically integrated in 3.3 kV IGBTs

Author

Urresti, J. ; Flores, D. ; Hidalgo, S. ; Rebollo, J. ; Caramel, C. ; Austin, P. ; Sanchez, J.L.

Author_Institution

Inst. de Microelectron. de Barcelona, CSIC, Bellaterra, Spain

fYear

2011

fDate

8-11 Feb. 2011

Firstpage

1

Lastpage

4

Abstract

This work deals with the study of a voltage sensor monolithically integrated with 3.3 kV-50 A IGBT. First, the sensor operation mode is explained, and the study of its behaviour, both stationary and transient regimes, is presented for the first time. In addition, the study of its performance under inductive turn-off conditions has been made. To explore this event, physical TCAD simulations have been carried out, comparing the IGBTs with and without voltage sensor.

Keywords

insulated gate bipolar transistors; technology CAD (electronics); voltage measurement; IGBT; current 50 A; inductive turn-off condition; physical TCAD simulation; sensor operation mode; stationary regime; transient regime; voltage 3.3 kV; voltage measurement; voltage sensor; Anodes; Insulated gate bipolar transistors; Inverters; Logic gates; Reliability; Transient analysis; IGBTs; Power applications; TCAD simulations; Voltage-Sensor; inductive Turn-off; transient characteristics;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2011 Spanish Conference on

Conference_Location

Palma de Mallorca

Print_ISBN

978-1-4244-7863-7

Type

conf

DOI

10.1109/SCED.2011.5744156

Filename

5744156