• DocumentCode
    2857121
  • Title

    Current calculation on VLSI signal interconnects

  • Author

    Shao, Muzhou ; Gao, Youxin ; Yuan, Li-Pen ; Chen, Hung-Ming ; Wong, Martin DF

  • Author_Institution
    Synopsys Inc., Mountain View, CA, USA
  • fYear
    2005
  • fDate
    21-23 March 2005
  • Firstpage
    580
  • Lastpage
    585
  • Abstract
    With IC technology scaling down to nanometer sizes, the higher working frequency and smaller geometry drive the reliability of signal interconnects to be a critical challenge in VLSI design. Post-layout reliability verification is an effective solution to this challenge. However, the implementation of a full-chip verification on signal electromigration requires a huge number of interconnect current calculations. The dynamic current calculation methods established on time domain circuit simulators are prohibitively expensive of runtime when applied to DSM (deep sub-micron) ICs. We propose an efficient static current calculation technique. A notable characteristic of this technique is that current calculations are based on ramp input signals, a more realistic signal than a step input. Moreover, an advanced gate model is applied to this technique; thus the current it yields is more accurate than that using a switch-resistor model. Since different electromigration models require different types of interconnect current values in their evaluation, this technique can handle the calculation of average, RMS and peak currents in order to perform a comprehensive reliability validation in IC designs. The experimental results demonstrate the efficiency and accuracy of this technique. Combined with a pruning technique, it is integrated into a reliability verification flow to be tested on a SoC design.
  • Keywords
    VLSI; calculation; circuit analysis computing; electric current; electromigration; integrated circuit design; integrated circuit interconnections; integrated circuit modelling; integrated circuit reliability; nanoelectronics; system-on-chip; IC design reliability validation; SoC design; VLSI design; VLSI signal interconnect reliability; analysis tools; deep sub-micron IC; dynamic current calculation methods; electromigration models; full-chip verification; gate model; interconnect current calculations; nanotechnology; post-layout reliability verification; pruning technique; ramp input signal; signal electromigration; static current calculation technique; step input signal; Circuit simulation; Electromigration; Frequency; Geometry; Integrated circuit interconnections; Integrated circuit modeling; Performance evaluation; Runtime; Signal design; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality of Electronic Design, 2005. ISQED 2005. Sixth International Symposium on
  • Print_ISBN
    0-7695-2301-3
  • Type

    conf

  • DOI
    10.1109/ISQED.2005.36
  • Filename
    1410647