DocumentCode :
2857121
Title :
Current calculation on VLSI signal interconnects
Author :
Shao, Muzhou ; Gao, Youxin ; Yuan, Li-Pen ; Chen, Hung-Ming ; Wong, Martin DF
Author_Institution :
Synopsys Inc., Mountain View, CA, USA
fYear :
2005
fDate :
21-23 March 2005
Firstpage :
580
Lastpage :
585
Abstract :
With IC technology scaling down to nanometer sizes, the higher working frequency and smaller geometry drive the reliability of signal interconnects to be a critical challenge in VLSI design. Post-layout reliability verification is an effective solution to this challenge. However, the implementation of a full-chip verification on signal electromigration requires a huge number of interconnect current calculations. The dynamic current calculation methods established on time domain circuit simulators are prohibitively expensive of runtime when applied to DSM (deep sub-micron) ICs. We propose an efficient static current calculation technique. A notable characteristic of this technique is that current calculations are based on ramp input signals, a more realistic signal than a step input. Moreover, an advanced gate model is applied to this technique; thus the current it yields is more accurate than that using a switch-resistor model. Since different electromigration models require different types of interconnect current values in their evaluation, this technique can handle the calculation of average, RMS and peak currents in order to perform a comprehensive reliability validation in IC designs. The experimental results demonstrate the efficiency and accuracy of this technique. Combined with a pruning technique, it is integrated into a reliability verification flow to be tested on a SoC design.
Keywords :
VLSI; calculation; circuit analysis computing; electric current; electromigration; integrated circuit design; integrated circuit interconnections; integrated circuit modelling; integrated circuit reliability; nanoelectronics; system-on-chip; IC design reliability validation; SoC design; VLSI design; VLSI signal interconnect reliability; analysis tools; deep sub-micron IC; dynamic current calculation methods; electromigration models; full-chip verification; gate model; interconnect current calculations; nanotechnology; post-layout reliability verification; pruning technique; ramp input signal; signal electromigration; static current calculation technique; step input signal; Circuit simulation; Electromigration; Frequency; Geometry; Integrated circuit interconnections; Integrated circuit modeling; Performance evaluation; Runtime; Signal design; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality of Electronic Design, 2005. ISQED 2005. Sixth International Symposium on
Print_ISBN :
0-7695-2301-3
Type :
conf
DOI :
10.1109/ISQED.2005.36
Filename :
1410647
Link To Document :
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