• DocumentCode
    2857178
  • Title

    The effect of carrier heating on the noise spectral densities for double-gate MOSFET devices

  • Author

    Nae, B. ; Lazaro, A. ; Ritzenthaler, R. ; Iniguez, B.

  • Author_Institution
    Dept. d´´Eng. Electron., Electr. i Autom., Univ. Rovira i Virgili, Tarragona, Spain
  • fYear
    2011
  • fDate
    8-11 Feb. 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, we study the importance of the carrier heating effects on the noise performances of symmetric Double-Gate (DG) MOSFET devices. We present results based on the compact analytical determination of the gate and drain noise spectrum densities and their correlation in DG MOSFETs.
  • Keywords
    MOSFET; semiconductor device noise; carrier heating; double-gate MOSFET devices; drain noise spectrum densities; gate noise spectrum densities; Correlation; Electric fields; Heating; Logic gates; MOSFET circuits; Noise; Transistors; MOSFET; compact modeling; double-gate; noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices (CDE), 2011 Spanish Conference on
  • Conference_Location
    Palma de Mallorca
  • Print_ISBN
    978-1-4244-7863-7
  • Type

    conf

  • DOI
    10.1109/SCED.2011.5744163
  • Filename
    5744163
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2857178