• DocumentCode
    2857287
  • Title

    Study of the effect of device geometry on the AC behaviour of nanoelectronic devices

  • Author

    Benali, A. ; Traversa, F.L. ; Albareda, G. ; Alarcón, A. ; Aghoutane, M. ; Oriols, X.

  • Author_Institution
    Autonoma de Barcelona, Bellaterra, Spain
  • fYear
    2011
  • fDate
    8-11 Feb. 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The main goal of this work is to study the effect of the structure geometries on the time dependent current in the nano electronic devices. The Ramo-Shockley-Pellegrini theorems are used together with many-particle Monte Carlo simulator to study this problem. In particular, it is shown that when the lateral surfaces (Ly, Lz) where the total current is collected are decreased, while keeping the longitudinal dimension (Lx) fixed, the high frequency range where the AC spectrum is still meaningful increases.
  • Keywords
    Monte Carlo methods; geometry; nanoelectronics; AC behaviour; Ramo-Shockley-Pellegrini theorem; device geometry; many-particle Monte Carlo simulator; nanoelectronic device; structure geometry; Boundary conditions; Electron devices; Equations; Geometry; Mathematical model; Nanoscale devices; Shape;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices (CDE), 2011 Spanish Conference on
  • Conference_Location
    Palma de Mallorca
  • Print_ISBN
    978-1-4244-7863-7
  • Type

    conf

  • DOI
    10.1109/SCED.2011.5744169
  • Filename
    5744169
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2857287