Novel DRAM mitigation technique

This paper describes a novel patented radiation mitigation technique for DRAM cell memories. Because of their non-symmetrical structure, only one state is sensitive to radiations. This particular property is used to detect and correct upsets. Several fault-tolerant architectures are proposed, which are able to detect and correct all SEU/MBU in a word, whatever its length. Overhead in term of additional memory cells is lower than other classical mitigation techniques.