DocumentCode :
2857404
Title :
Current-voltage characteristics of graphene based devices
Author :
Moldovan, Oana ; Jiménez, David
Author_Institution :
Dept. d´´Eng. Electron., Univ. Autonoma de Barcelona, Bellaterra, Spain
fYear :
2011
fDate :
8-11 Feb. 2011
Firstpage :
1
Lastpage :
3
Abstract :
In this work we present a simple model for computing the current-voltage characteristics of graphene based transistors (G-FETs). Our model is based on a simple treatment of electrostatics and a transport module including both tunneling and thermionic currents, properly capturing the effect of physical and electrical parameters. The predictive behaviour is demonstrated via comparison with experimental measurements of devices.
Keywords :
electrostatics; field effect transistors; graphene; G-FET; current-voltage characteristics; electrical parameters; electrostatics; graphene based devices; graphene based field-effect transistors; physical parameters; thermionic currents; transport module; tunneling currents; Biological system modeling; Capacitance; Current measurement; Electrostatics; Logic gates; Transistors; Tunneling; Graphene; field-effect transistor; modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4244-7863-7
Type :
conf
DOI :
10.1109/SCED.2011.5744177
Filename :
5744177
Link To Document :
بازگشت