Simulation of electron transport in magnetic tunnel junctions using the drift-diffusion model

Author

Comesana, Enrique ; Garcia-Loureiro, Antonio ; Aldegunde, Manuel

Author_Institution

Dept. de Electron. e Comput., Univ. de Santiago de Compostela, Santiago de Compostela, Spain

fYear

2011

fDate

8-11 Feb. 2011

Firstpage

1

Lastpage

4

Abstract

In this work we present preliminary results of the simulations done for a (Zn, Co)O/ZnO/(Zn, Co)O MTJ to obtain the I-V spin dependent characteristics and the TMR using an in-house developed simulator. The Poisson equation and two electron continuity equations, one for each spin, are solved self-consistently to take into account separately the contribution of each spin to the total current. In this preliminary work, the results are compared with previous experimental results obtained for a range of low temperatures between 4 K and 100 K.

Keywords

II-VI semiconductors; Poisson equation; cobalt; diffusion; ferromagnetic materials; magnetic multilayers; semimagnetic semiconductors; tunnelling magnetoresistance; wide band gap semiconductors; zinc compounds; (ZnCo)O-ZnO-(ZnCo)O; I-V spin dependent characteristics; Poisson equation; TMR; drift-diffusion model; electron continuity equations; electron transport simulation; magnetic tunnel junctions; temperature 4 K to 100 K; total current; tunnel magnetoresistance in-house developed simulator; Magnetic separation; Magnetic tunneling; Mathematical model; Temperature; Temperature measurement; Tunneling magnetoresistance; Zinc oxide; Magnetotransport; NiN devices; low temperature electron transport; modeling; spintronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2011 Spanish Conference on

Conference_Location

Palma de Mallorca

Print_ISBN

978-1-4244-7863-7

Type

conf

DOI

10.1109/SCED.2011.5744178

Filename

5744178