DocumentCode :
2857485
Title :
Oxide-isolated integrated injection logic
Author :
Allen, Ross ; Schuegraf, Klaus
Author_Institution :
Northrop Research and Technology Center, Hawthorne, CA, USA
Volume :
XVII
fYear :
1974
fDate :
15-13 Feb. 1974
Firstpage :
16
Lastpage :
17
Abstract :
Integrated injection logic circuits incorporating oxide isolation for optimum speed power performance will be discussed, citing test data from I2L/MSI chips with either N+ or oxide isolation structures. A comparison of functional density, power-product, maximum clock rate and process complexity will be presented.
Keywords :
Conductivity; Delay effects; Diodes; Geometry; Integrated circuit technology; Inverters; Logic devices; Parasitic capacitance; Power supplies; Pulse measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1974 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1974.1155316
Filename :
1155316
Link To Document :
بازگشت