DocumentCode
2857485
Title
Oxide-isolated integrated injection logic
Author
Allen, Ross ; Schuegraf, Klaus
Author_Institution
Northrop Research and Technology Center, Hawthorne, CA, USA
Volume
XVII
fYear
1974
fDate
15-13 Feb. 1974
Firstpage
16
Lastpage
17
Abstract
Integrated injection logic circuits incorporating oxide isolation for optimum speed power performance will be discussed, citing test data from I2L/MSI chips with either N+ or oxide isolation structures. A comparison of functional density, power-product, maximum clock rate and process complexity will be presented.
Keywords
Conductivity; Delay effects; Diodes; Geometry; Integrated circuit technology; Inverters; Logic devices; Parasitic capacitance; Power supplies; Pulse measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1974 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1974.1155316
Filename
1155316
Link To Document