• DocumentCode
    2857503
  • Title

    Improving the firing mechanisms in thyristors for lighting applications

  • Author

    Flores, D. ; Hidalgo, S. ; Villamor, A. ; Mcquaid, S. ; Mazarredo, I.

  • Author_Institution
    Inst. de Microelectron. de Barcelona, Barcelona, Spain
  • fYear
    2011
  • fDate
    8-11 Feb. 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Thyristors to be used in 600 V domestic applications are still very widespread as AC switches or as TRIACs. These devices are typically integrated with very deep diffusions by using solid or liquid doping processes. Thyristors implemented with ion implantation processes exhibit more stable performances and their firing mechanisms are more controllable. In this paper three different thyristor structures are analysed and fabricated with deep and superficial diffusions, comparing the firing behaviour and their stability as a function of process technology characteristics.
  • Keywords
    doping; ion implantation; lighting; thyristors; AC switches; TRIAC; firing behaviour; firing mechanism; ion implantation; lighting application; liquid doping process; solid doping process; thyristor structures; Doping; Electrodes; Firing; Junctions; Logic gates; Metals; Thyristors; AC Switch; Bilateral switch; Gate trigger; Lighting; Thyristor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices (CDE), 2011 Spanish Conference on
  • Conference_Location
    Palma de Mallorca
  • Print_ISBN
    978-1-4244-7863-7
  • Type

    conf

  • DOI
    10.1109/SCED.2011.5744182
  • Filename
    5744182