GaN Ohmic contact resistance vs temperature

Author

Fontseré, A. ; Pérez-Tomás, A. ; Placidi, M. ; Fernández-Martínez, P. ; Baron, N. ; Chenot, S. ; Cordier, Y. ; Moreno, J.C. ; Jennings, M.R. ; Gammon, P.M. ; Walker, D.

Author_Institution

IMB-CNM-CSIC, Barcelona, Spain

fYear

2011

fDate

8-11 Feb. 2011

Firstpage

1

Lastpage

2

Abstract

The temperature impact on the Ohmic contact to Gallium Nitride (GaN) device properties is investigated in the range of 25°C to 300°C by means of the Transmission Line Method (TLM) technique. This study is centered in two kinds of Ohmic contacts: Implanted N⁺ GaN and heterojunction AlGaN/GaN contacts. For N⁺ contact resistance behavior is explained in terms of the field-effect or thermionic field effect current transport mechanism. However, the heterojunction contact resistance behavior is explained by the mobility properties in the two dimensional electron gas.

Keywords

III-V semiconductors; aluminium compounds; contact resistance; electron mobility; gallium compounds; high electron mobility transistors; ion implantation; nitrogen; ohmic contacts; semiconductor doping; semiconductor heterojunctions; transmission line theory; two-dimensional electron gas; wide band gap semiconductors; AlGaN-GaN; GaN:N; contact resistance behavior; gallium nitride device properties; heterojunction; mobility properties; ohmic contact resistance; temperature 25 degC to 300 degC; temperature impact; thermionic field effect current transport mechanism; transmission line method technique; two-dimensional electron gas; Aluminum gallium nitride; Gallium nitride; Ohmic contacts; Silicon; Temperature; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2011 Spanish Conference on

Conference_Location

Palma de Mallorca

Print_ISBN

978-1-4244-7863-7

Type

conf

DOI

10.1109/SCED.2011.5744188

Filename

5744188