Title :
Emitter diffusion method for extremely thin silicon wafers
Author :
Ochoa-Martínez, E. ; Merchán, D. ; Romero, R. ; Gabás, M. ; Martínez, L. ; Martín, F. ; Leinen, D. ; Ramos-Barrado, J.R. ; Vázquez, C. ; Hartiti, B.
Author_Institution :
Dipt. de Fis. Aplic. I, Univ. de Malaga, Málaga, Spain
Abstract :
The aim of this study is to optimize a low cost phosphorus diffusion process suitable for pn junction formation on extremely thin (<;100um) c-Si solar cells. The deposition of the doping layer has been carried out by spray coating of commercial and non-commercial precursors. There have been monitored sheet resistance, effective lifetime and oxygen content in the prepared emitters.
Keywords :
carrier lifetime; crystal growth from melt; diffusion; electrical resistivity; elemental semiconductors; minority carriers; p-n junctions; phosphorus; semiconductor doping; semiconductor growth; semiconductor thin films; silicon; solar cells; spray coatings; Si:P; doping layer; emitter diffusion method; pn junction; sheet resistance; spray coating; thin silicon wafers; Photovoltaic cells; Photovoltaic systems; Resistance; Silicon; Solar energy; Temperature measurement; c-Si; gettering; phosphorus diffussion; silicon; solar cells; spray coating;
Conference_Titel :
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4244-7863-7
DOI :
10.1109/SCED.2011.5744189
