Title :
Asymmetrically-recessed nano-scale In0.52Al0.48As-In0.53Ga0.47As double-gate HEMT for high breakdown voltage
Author :
Rathi, Servin ; Gupta, Mridula ; Gupta, R.S.
Author_Institution :
Dept. of Electron. Sci., Univ. of Delhi South Campus, New Delhi, India
Abstract :
In this paper, a generalized analysis of Asymmetrically-Recessed Double Gate High Electron Mobility Transistor (DGHEMT) to realize high breakdown voltage is carried out. As with aggressive scaling in FETs the short-channel effects like Vth roll-off, degradation in cut-off frequency, transconductance etc becomes unavoidable at nanometer gate-length. Recently, DGHEMT has been proposed by Wichmann et. al. for improved performance and suppression of short-channel effects. Though short-channel effects have been effectively suppressed but the reliability analysis of DGHEMT remains unexplored. In this paper device parameters like potential, electric field profile, drain current have been studied for the improvement in breakdown voltage using Atlas Device simulator.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; semiconductor device reliability; Atlas device simulator; DGHEMT; FET; In0.52Al0.47As-In0.53Ga0.47As; asymmetrically-recessed nanoscale HEMT; double-gate HEMT; drain current; electric field profile; high breakdown voltage; high electron mobility transistor; reliability analysis; short-channel effect; Electric potential; HEMTs; Indium gallium arsenide; Logic gates; Performance evaluation; Asymmetrically-Recessed; DGHEMT; drain current; gate-capacitance and RF performance; transconductance;
Conference_Titel :
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4244-7863-7
DOI :
10.1109/SCED.2011.5744193
