Title :
Estimating and enhancing the tolerance and yield for tunneling SRAM cells by simulation
Author :
Zuo, Dingli ; Kelly, Michael J.
Author_Institution :
Dept. of Eng., Univ. of Cambridge, Cambridge, UK
Abstract :
As a novel implementation of the static random access memory (SRAM), tunneling SRAM (TSRAM) uses a resonant-tunneling-diode (RTD)-based monostable-bistable logic element (MOBILE) and features low standby power dissipation and high integration density. A major challenge in TSRAM´s low-cost manufacture is the wide current variability associated with the RTD´s. In this paper, we propose a Monte Carlo simulation method for estimating and enhancing the tolerance and yield for the TSRAM cells, based on the current-voltage characteristics of the RTD´s and the load-line diagram of the MOBILE.
Keywords :
Monte Carlo methods; SRAM chips; resonant tunnelling diodes; Monte Carlo simulation method; RTD; current-voltage characteristics; high integration density; load-line diagram; low standby power dissipation; monostable-bistable logic element; resonant-tunneling-diode; static random access memory; tolerance enhancement; tunneling SRAM cells; wide current variability; yield enhancement; Electric potential; Estimation; Mobile communication; Random access memory; Resonant tunneling devices; SRAM; resonant tunneling diodes; tolerance analysis; yield estimation;
Conference_Titel :
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4244-7863-7
DOI :
10.1109/SCED.2011.5744194