DocumentCode
2857724
Title
Microwave annealing effect on the resistivity of doped hydrogenated amorphous silicon on glass
Author
Chen, Huai-Yi ; Chang, Chien-Pin ; Lee, Yao-Jen
Author_Institution
Dept. of Electron. Eng., Huafan Univ., Taipei, Taiwan
fYear
2011
fDate
8-11 Feb. 2011
Firstpage
1
Lastpage
2
Abstract
We employed a 5.8 GHz microwave annealing (MWA) to electrically activate the doped hydrogenated amorphous silicon (a-Si:H) thin films on glass. As compared with traditional rapid thermal annealing (RTA), MWA can electrically activate better the doped a-Si films at low annealing temperature and short processing time and effectively reduce their resistivity. The longer annealing time for MWA is better.
Keywords
amorphous semiconductors; electrical resistivity; elemental semiconductors; hydrogenation; rapid thermal annealing; semiconductor thin films; silicon; Si:H; doped hydrogenated amorphous silicon thin films; microwave annealing effect; rapid thermal annealing; resistivity; Amorphous silicon; Annealing; Electromagnetic heating; Films; Microwave integrated circuits; Microwave transistors; glass substrate; hydrogenated amorphous silicon; microwave annealing; resistivity; thin film;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location
Palma de Mallorca
Print_ISBN
978-1-4244-7863-7
Type
conf
DOI
10.1109/SCED.2011.5744195
Filename
5744195
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