DocumentCode
2857797
Title
Local oxidation of silicon/CMOS: Technology/design system for LSI in CMOS
Author
Strachan, Alejandro ; Wagner, Karl
Author_Institution
Philips IC Development Dept., Nijmegen, Netherlands
Volume
XVII
fYear
1974
fDate
15-13 Feb. 1974
Firstpage
60
Lastpage
61
Abstract
The LOCMOS process and its ability to increase packing density and reduce cost of LSI CMOS circuits will be presented. A computer-aided layout system which can be used for wildlogic circuits using this technology will also be described.
Keywords
Aluminum; CMOS technology; Computational modeling; Counting circuits; Integrated circuit interconnections; LAN interconnection; Large scale integration; Logic testing; Oxidation; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1974 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1974.1155337
Filename
1155337
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