DocumentCode :
2857797
Title :
Local oxidation of silicon/CMOS: Technology/design system for LSI in CMOS
Author :
Strachan, Alejandro ; Wagner, Karl
Author_Institution :
Philips IC Development Dept., Nijmegen, Netherlands
Volume :
XVII
fYear :
1974
fDate :
15-13 Feb. 1974
Firstpage :
60
Lastpage :
61
Abstract :
The LOCMOS process and its ability to increase packing density and reduce cost of LSI CMOS circuits will be presented. A computer-aided layout system which can be used for wildlogic circuits using this technology will also be described.
Keywords :
Aluminum; CMOS technology; Computational modeling; Counting circuits; Integrated circuit interconnections; LAN interconnection; Large scale integration; Logic testing; Oxidation; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1974 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1974.1155337
Filename :
1155337
Link To Document :
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