Title :
Sn doped GaAs by CBE using tetramethyltin
Author :
Núnez, C. García ; Ghita, D. ; García, B.J.
Author_Institution :
Dept. de Fis. Aplic., Univ. Autonoma de Madrid, Madrid, Spain
Abstract :
Growth and characterization of tin doped GaAs(100) layers using chemical beam epitaxy are described in this work. The resistivity, type of carriers, as well as their net concentrations and mobilities were obtained by Hall Effect measurements. Layers with electron concentrations between 7.0×1016 and 1.6×1019 cm3 were obtained, while the measured room temperature mobilities were in the range 860-2700 cm2/Vs. Photoluminescence spectra show the presence of a donor related transition, whose intensity increases with the sample doping. Acceptor related transitions, different than the residual carbon doping, were not observed, suggesting that Sn incorporates as a donor with a small compensation ratio.
Keywords :
Hall mobility; III-V semiconductors; chemical beam epitaxial growth; electrical resistivity; electron density; electron mobility; gallium arsenide; photoluminescence; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; tin; CBE; GaAs:Sn; Hall effect measurement; carrier concentration; carrier mobility; chemical beam epitaxy; donor related transition; doping; electrical resistivity; electron concentration; epitaxial layers; photoluminescence spectra; room temperature mobility; temperature 293 K to 298 K; tetramethyltin; Carbon; Doping; Gallium arsenide; Impurities; Molecular beam epitaxial growth; Tin; doping; epitaxial growth; semiconductor;
Conference_Titel :
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4244-7863-7
DOI :
10.1109/SCED.2011.5744204
