• DocumentCode
    2857921
  • Title

    Properties and potential of BARITT devices

  • Author

    Siang-Ping Kwok ; Nguyen-Ba, H. ; Haddad, G.

  • Author_Institution
    University of Michigan, Ann Arbor, MI, USA
  • Volume
    XVII
  • fYear
    1974
  • fDate
    15-13 Feb. 1974
  • Firstpage
    180
  • Lastpage
    181
  • Abstract
    The properties and potential of Baritt devices with regard to power output, efficiency and noise will be presented, The effects of doping and material parameters will be described, and experimental results on X-band devices offered.
  • Keywords
    Doppler radar; Electron mobility; Frequency modulation; Gallium arsenide; Gunn devices; Impurities; Neodymium; Numerical simulation; Radar detection; Signal detection;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1974 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1974.1155345
  • Filename
    1155345
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2857921