DocumentCode :
2857958
Title :
Hydrodynamic device simulation of 200 GHz SiGe heterojunction bipolar transistors
Author :
López-González, Juan M.
Author_Institution :
Dept. d´´Eng. Electron., Univ. Politec. de Catalunya, Barcelona, Spain
fYear :
2011
fDate :
8-11 Feb. 2011
Firstpage :
1
Lastpage :
4
Abstract :
This paper studies the effect of hydrodynamic relaxation times on the base and collector currents, IB, and IC, and ac figures of merit, cut-off frequency fT, and maximum oscillation frequency, fmax, for 200 GHz SiGe heterojunction bipolar transistors (HBTs).
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; HBT; SiGe; heterojunction bipolar transistors; hydrodynamic device simulation; hydrodynamic relaxation times; Cutoff frequency; Heterojunction bipolar transistors; High definition video; Hydrodynamics; Impact ionization; Mathematical model; Silicon germanium; Heterojuntion bipolar transistor; SiGe semiconductor; hydrodynamic device simulation; impact ionization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4244-7863-7
Type :
conf
DOI :
10.1109/SCED.2011.5744208
Filename :
5744208
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2857958
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