Title :
Characterization of SrTiO3-based MIM capacitors grown by using different precursors and growth temperatures
Author :
García, H. ; Castán, H. ; Gómez, A. ; Duenas, S. ; Bailón, L. ; Kukli, K. ; Kariniemi, M. ; Kemell, M. ; Niinistö, J. ; Ritala, M. ; Leskelä, M.
Author_Institution :
Dipt. de Electr. y Electron., Univ. de Valladolid, Valladolid, Spain
Abstract :
SrTiO3-based MIM capacitors were electrically characterized. Strontium titanate thin films were grown by atomic layer deposition using Sr(iPr3Cp)2 and (CpMe5)Ti(OMe)3 as strontium and titanium precursors and H2O and O3 as oxygen precursors. The temperatures used to grow the high-k films were 250 and 300 °C. The films were amorphous in the as-deposited state. The lowest CET values were achieved in the films grown using ozone at 300 °C. Leakage current is lower when samples were grown at 250 °C and when were grown using O3 as oxygen precursor.
Keywords :
MIM devices; amorphous semiconductors; atomic layer deposition; high-k dielectric thin films; leakage currents; semiconductor growth; semiconductor thin films; thin film capacitors; CET value; MIM capacitor; SrTiO3; amorphous film; atomic layer deposition; growth temperature; high-k film; leakage current; oxygen precursor; ozone; strontium titanate thin film; temperature 250 C; temperature 300 C; Annealing; Atomic layer deposition; Films; Leakage current; Strontium; Temperature measurement; Water; Atomic Layer Deposition; DRAM memories; Electrical properties; MIM capacitors; Strontium titanate;
Conference_Titel :
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4244-7863-7
DOI :
10.1109/SCED.2011.5744209
