Title :
A study of tunneling assisted charge exchange on the inner interface of high-k dielectric stacks
Author :
Castán, H. ; García, H. ; Gómez, A. ; Duenas, S. ; Bailón, L.
Author_Institution :
Dipt. de Electr. y Electron., Univ. de Valladolid, Valladolid, Spain
Abstract :
The tunneling assisted charge exchange on the inner interface of high dielectric constant (high-k) dielectric stacks has been studied. The charging and discharging of traps existing at the HfO2/SiNx interlayer increase the transient capacitance amplitude, and so deep level transient spectroscopy (DLTS) measurements provide overestimated interfacial state density (Dit) values. This effect is quite important for very thin silicon nitride layers. The analysis of our experimental data allowed us to propose a physical model of the inner interface behavior.
Keywords :
MIS structures; charge exchange; deep level transient spectroscopy; hafnium compounds; high-k dielectric thin films; interface states; silicon compounds; tunnelling; HfO2-SiNx; MIS structures; deep level transient spectroscopy; high dielectric constant dielectric stacks; inner interface behavior; interfacial state density; thin silicon nitride layers; transient capacitance amplitude; trap charging; trap discharging; tunneling-assisted charge exchange; Capacitance; Dielectrics; Films; Silicon; Temperature measurement; Transient analysis; Variable speed drives; Dielectrics; Electrical properties and measurements; Interfacial states; Metal-oxide-semiconductor structures (MIS);
Conference_Titel :
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4244-7863-7
DOI :
10.1109/SCED.2011.5744210
