DocumentCode
2858060
Title
A low-noise integrated S-band amplifier
Author
Vendelin, G. ; Archer, Jieutonne ; Bechtel, N.
Author_Institution
Fairchild Camera and Instrument Corp., Palo Alto, CA, USA
Volume
XVII
fYear
1974
fDate
15-13 Feb. 1974
Firstpage
176
Lastpage
177
Abstract
A developmental ion-implanted low-noise transistor has been used in a three-stage integrated amplifier. A noise figure of 3 dB has been achieved with a gain of 23 ± 0.7 dB across the design range of 3.1 - 3.5 GHz.
Keywords
Admittance; Bipolar transistors; Cameras; Circuit noise; Equations; Gain; Instruments; Low-frequency noise; Low-noise amplifiers; Noise figure;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1974 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1974.1155353
Filename
1155353
Link To Document