Title :
A low-noise integrated S-band amplifier
Author :
Vendelin, G. ; Archer, Jieutonne ; Bechtel, N.
Author_Institution :
Fairchild Camera and Instrument Corp., Palo Alto, CA, USA
Abstract :
A developmental ion-implanted low-noise transistor has been used in a three-stage integrated amplifier. A noise figure of 3 dB has been achieved with a gain of 23 ± 0.7 dB across the design range of 3.1 - 3.5 GHz.
Keywords :
Admittance; Bipolar transistors; Cameras; Circuit noise; Equations; Gain; Instruments; Low-frequency noise; Low-noise amplifiers; Noise figure;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1974 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1974.1155353
