• DocumentCode
    2858091
  • Title

    Analytical modelling of base transit time and gain of InP/InGaAs HBTs including effect of temperature

  • Author

    Chowdhury, Subhra ; Kalyani, S.B.

  • Author_Institution
    Gov. Eng. Coll., Kalyani, India
  • fYear
    2011
  • fDate
    8-11 Feb. 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    An analytical model of InP-InGaAs Heterojunction Bipolar Transistors is presented in this paper. Two important factors for determining the performance of a transistor are base transit time (τb) and current gain (β). Variations of base transit time and gain with temperature and other device parameters for both uniform and nonuniform base doping profile are studied here. Dependance of band gap on composition and dependence of mobility on temperature are also taken into account in the model.
  • Keywords
    III-V semiconductors; energy gap; gallium compounds; heterojunction bipolar transistors; indium compounds; phosphorus compounds; InP-InGaAs; InP-InGaAs heterojunction bipolar transistor; analytical modelling; band gap; base doping profile; base transit time; current gain; temperature effect; Doping profiles; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Junctions; Base transit time; Current Gain; InP/InGaAs HBT;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices (CDE), 2011 Spanish Conference on
  • Conference_Location
    Palma de Mallorca
  • Print_ISBN
    978-1-4244-7863-7
  • Type

    conf

  • DOI
    10.1109/SCED.2011.5744215
  • Filename
    5744215
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2858091