Interface engineering by metal electrode scavenging of Gd2O3 films sputtered on Si

Author

Pampillón, M.A. ; Feijoo, P.C. ; Andrés, E. San ; Toledano-Luque, M. ; Prado, A. Del ; Blázquez, A.J. ; Lucía, M.L.

Author_Institution

Dept. de Fis. Aplic. III (Electr. y Electron.), Univ. Complutense de Madrid, Madrid, Spain

fYear

2011

fDate

8-11 Feb. 2011

Firstpage

1

Lastpage

4

Abstract

Amorphous Gd₂O₃ thin films were grown on Si by high-pressure sputtering (HPS). In order to minimize the uncontrolled interfacial SiO_x, a metallic Gd film was deposited in Ar atmosphere, and afterwards it was in situ plasma oxidized in an Ar/O₂ plasma. For postprocessing interfacial SiO_x reduction several top metal electrodes were studied: platinum, aluminum and titanium. It was found that Pt did not react with the electrode or interface. On the other hand, Al reacted with the dielectric reducing capacitance. Finally, Ti was effective in reducing the SiO₂ interface thickness without severely compromising gate dielectric leakage.

Keywords

electrodes; gadolinium compounds; high-pressure effects; oxidation; silicon compounds; sputter deposition; thin films; Gd₂O₃; Si; SiO_x; amorphous thin films; dielectric reducing capacitance; gate dielectric leakage; high-pressure sputtering; in situ plasma oxidation; interface engineering; interface thickness; metal electrode scavenging; metal electrodes; metallic thin film; post-processing interfacial reduction; Argon; Electrodes; Films; Metals; Plasmas; Silicon; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2011 Spanish Conference on

Conference_Location

Palma de Mallorca

Print_ISBN

978-1-4244-7863-7

Type

conf

DOI

10.1109/SCED.2011.5744216

Filename

5744216