Title :
Interface engineering by metal electrode scavenging of Gd2O3 films sputtered on Si
Author :
Pampillón, M.A. ; Feijoo, P.C. ; Andrés, E. San ; Toledano-Luque, M. ; Prado, A. Del ; Blázquez, A.J. ; Lucía, M.L.
Author_Institution :
Dept. de Fis. Aplic. III (Electr. y Electron.), Univ. Complutense de Madrid, Madrid, Spain
Abstract :
Amorphous Gd2O3 thin films were grown on Si by high-pressure sputtering (HPS). In order to minimize the uncontrolled interfacial SiOx, a metallic Gd film was deposited in Ar atmosphere, and afterwards it was in situ plasma oxidized in an Ar/O2 plasma. For postprocessing interfacial SiOx reduction several top metal electrodes were studied: platinum, aluminum and titanium. It was found that Pt did not react with the electrode or interface. On the other hand, Al reacted with the dielectric reducing capacitance. Finally, Ti was effective in reducing the SiO2 interface thickness without severely compromising gate dielectric leakage.
Keywords :
electrodes; gadolinium compounds; high-pressure effects; oxidation; silicon compounds; sputter deposition; thin films; Gd2O3; Si; SiOx; amorphous thin films; dielectric reducing capacitance; gate dielectric leakage; high-pressure sputtering; in situ plasma oxidation; interface engineering; interface thickness; metal electrode scavenging; metal electrodes; metallic thin film; post-processing interfacial reduction; Argon; Electrodes; Films; Metals; Plasmas; Silicon; Sputtering;
Conference_Titel :
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4244-7863-7
DOI :
10.1109/SCED.2011.5744216
