Title :
DC thermal numerical simulation of DG MOSFET
Author :
González, B. ; Iniguez, B. ; Lázaro, A. ; Cerdeira, A.
Author_Institution :
IUMA, Univ. de Las Palmas de G.C., Las Palmas, Spain
Abstract :
DC numerical simulations of a Double-Gate (DG) MOSFET are performed including self-heating. Considering proper thermal conductivity, hydrodynamic model and optimizing pads, the resulting maximum lattice temperature of the transistor is 345 K, being located in channel layer, at the drain extension.
Keywords :
MOSFET; numerical analysis; thermal conductivity; DC thermal numerical simulation; double-gate MOSFET; hydrodynamic model; maximum lattice temperature; optimizing pads; self-heating; thermal conductivity; Conductivity; Logic gates; MOSFET circuits; Silicon; Temperature dependence; Thermal conductivity; Thermal resistance; DC numerical simulation self-heating effects; DG MOSFET;
Conference_Titel :
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4244-7863-7
DOI :
10.1109/SCED.2011.5744223
