DocumentCode
2858218
Title
DC thermal numerical simulation of DG MOSFET
Author
González, B. ; Iniguez, B. ; Lázaro, A. ; Cerdeira, A.
Author_Institution
IUMA, Univ. de Las Palmas de G.C., Las Palmas, Spain
fYear
2011
fDate
8-11 Feb. 2011
Firstpage
1
Lastpage
4
Abstract
DC numerical simulations of a Double-Gate (DG) MOSFET are performed including self-heating. Considering proper thermal conductivity, hydrodynamic model and optimizing pads, the resulting maximum lattice temperature of the transistor is 345 K, being located in channel layer, at the drain extension.
Keywords
MOSFET; numerical analysis; thermal conductivity; DC thermal numerical simulation; double-gate MOSFET; hydrodynamic model; maximum lattice temperature; optimizing pads; self-heating; thermal conductivity; Conductivity; Logic gates; MOSFET circuits; Silicon; Temperature dependence; Thermal conductivity; Thermal resistance; DC numerical simulation self-heating effects; DG MOSFET;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location
Palma de Mallorca
Print_ISBN
978-1-4244-7863-7
Type
conf
DOI
10.1109/SCED.2011.5744223
Filename
5744223
Link To Document