Title :
Fundamental performance limits of MOS integrated circuits
Author :
Swanson, R. ; Meindl, J.
Author_Institution :
Stanford University, Stanford, CA, USA
Abstract :
This paper will describe MOST characteristic equations which encompass both weak and strong inversion and, at the same time, both long and short channels.
Keywords :
Charge carrier density; Energy consumption; Insulation; Laplace equations; MOS integrated circuits; Poisson equations; Propagation delay; Rough surfaces; Surface roughness; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1975 IEEE International
DOI :
10.1109/ISSCC.1975.1155365
