Title :
Coupled varactor based on PN junction and accumulation MOS for RF applications
Author :
García, J. ; Marrero-Martín, M. ; González, B. ; Aldea, I. ; Hernández, A.
Author_Institution :
Inst. for Appl. Microelectron. (IUMA), Univ. de Las Palmas de Gran Canaria, Las Palmas de Gran Canaria, Spain
Abstract :
In this work varactors based on pn-junction have been connected in parallel with accumulation mode MOS ones, in order to increase the final capacitance without losing the particular characteristics. So, three double varactors have been designed, fabricated and on-wafer measured. Results demonstrate that the combination of these varactors improve the global performance in relation to quality factor and tuning range.
Keywords :
Q-factor; p-n junctions; varactors; PN junction; RF applications; accumulation mode MOS; coupled varactor; double varactors; quality factor; Capacitance; Junctions; Q factor; Radio frequency; Tuning; Varactors; Voltage measurement; PN junction; accumulation MOS; integrated varactor;
Conference_Titel :
Electron Devices (CDE), 2011 Spanish Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4244-7863-7
DOI :
10.1109/SCED.2011.5744225
